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parameter max. units v ds drain- source voltage -20 v i d @ t a = 25c continuous drain current, v gs @ -4.5v -15 i d @ t a = 70c continuous drain current, v gs @ -4.5v -12 a i dm pulsed drain current -60 p d @t a = 25c power dissipation 2.5 p d @t a = 70c power dissipation 1.6 linear derating factor 20 mw/c v gs gate-to-source voltage 12 v t j, t stg junction and storage temperature range -55 to + 150 c 02/09/06 www.irf.com 1 IRF7425PBF hexfet power mosfet these p-channel hexfet power mosfets from international rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. this benefit provides the designer with an extremely efficient device for use in battery and load management applications.. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. with these improvements, multiple devices can be used in an application with dramatically reduced board space. the package is designed for vapor phase, infrared, or wave soldering technique description ultra low on-resistance p-channel mosfet surface mount available in tape & reel lead-free parameter max. units r ja maximum junction-to-ambient 50 c/w thermal resistance
top view 8 1 2 3 4 5 6 7 d d d g s a d s s v dss r ds(on) max (m i d 20v 8.2@v gs = -4.5v -15a 13@v gs = -2.5v -13a so-8

2 www.irf.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? -1.2 v t j = 25c, i s = -2.5a, v gs = 0v t rr reverse recovery time ??? 120 180 ns t j = 25c, i f = -2.5a q rr reverse recovery charge ??? 160 240 nc di/dt = -100a/s source-drain ratings and characteristics 60 2.5 s d g repetitive rating; pulse width limited by max. junction temperature. pulse width 400s; duty cycle parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -20 ??? ??? v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.010 ??? v/c reference to 25c, i d = -1ma ??? ??? 8.2 v gs = -4.5v, i d = -15a ??? ??? 13 v gs = -2.5v, i d = -13a v gs(th) gate threshold voltage -0.45 ??? -1.2 v v ds = v gs , i d = -250a g fs forward transconductance 44 ??? ??? s v ds = -10v, i d = -15a ??? ??? -1.0 v ds = -16v, v gs = 0v ??? ??? -25 v ds = -16v, v gs = 0v, t j = 70c gate-to-source forward leakage ??? ??? -100 v gs = -12v gate-to-source reverse leakage ??? ??? 100 v gs = 12v q g total gate charge ??? 87 130 i d = -15a q gs gate-to-source charge ??? 18 27 nc v ds = -10v q gd gate-to-drain ("miller") charge ??? 21 32 v gs = -4.5v t d(on) turn-on delay time ??? 13 ??? v dd = -10v t r rise time ??? 20 ??? i d = -1.0a t d(off) turn-off delay time ??? 230 ??? r g = 6.0 ? t f fall time ??? 160 ??? v gs = -4.5v c iss input capacitance ??? 7980 ??? v gs = 0v c oss output capacitance ??? 1480 ??? pf v ds = -15v c rss reverse transfer capacitance ??? 980 ??? ? = 1.0khz electrical characteristics @ t j = 25c (unless otherwise specified)
m ? r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current surface mounted on 1 in square cu board, t
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.01 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs -7.0v -5.0v -4.5v -2.5v -1.8v -1.5v -1.2v -1.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -1.0v 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs -7.0v -5.0v -4.5v -2.5v -1.8v -1.5v -1.2v -1.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -1.0v 0.1 1 10 100 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v = -15v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -4.5v -15a
4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 40 80 120 160 0 2 4 6 8 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -15a v = -10v ds v = -16v ds 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms 1 10 10 0 0 2000 4000 6000 8000 10000 12000 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0 3 6 9 12 15 t , case temperature ( c) -i , drain current (a) c d
1 0.1 % + - v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f fig 10a. switching time test circuit fig 10b. switching time waveforms 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
6 www.irf.com fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage fig 14b. gate charge test circuit fig 14a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v d s i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 1.0 2.0 3.0 4.0 5.0 -v gs, gate -to -source voltage (v) 0.005 0.010 0.015 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = -15a 0 102030405060 -i d , drain current (a) 0.005 0.006 0.007 0.008 0.009 0.010 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = -2.5v v gs = -4.5v
www.irf.com 7 fig 15. typical vgs(th) variance vs. juction temperature fig 16 typical power vs. time -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.5 2.0 2.5 3.0 - v g s ( t h ) , v a r i a c e ( v ) i d = -250a 0.001 0.010 0.100 1.000 10.000 100.000 time (sec) 0 20 40 60 80 100 120 p o w e r ( w )
8 www.irf.com so-8 package outline dimensions are shown in millimeters (inches) so-8 part marking

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www.irf.com 9 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 02/06 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) n otes: 1 . controlling dimension : millimeter. 2 . all dimensions are shown in millimeters(inches). 3 . outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in millimeters (inches)

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